PBSS301NZ NXP Semiconductors, PBSS301NZ Datasheet - Page 9
PBSS301NZ
Manufacturer Part Number
PBSS301NZ
Description
Pbss301nz 12 V, 5.8 A Npn Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS301NZ.pdf
(14 pages)
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Philips Semiconductors
8. Test information
PBSS301NZ_1
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
V
CC
= 12.5 V; I
oscilloscope
t
d
t
C
on
Rev. 01 — 7 September 2006
= 3 A; I
V
t
I
r
(probe)
450
Bon
= 0.15 A; I
R1
R2
Boff
R
B
V
BB
= 0.15 A
12 V, 5.8 A NPN low V
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
I
t
(100 %)
Boff
s
t
off
PBSS301NZ
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
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