PBSS302ND NXP Semiconductors, PBSS302ND Datasheet - Page 7

• Manufacturer Part Number: PBSS302ND
• Description: Pbss302nd 40 V, 4 A Npn Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PBSS302ND_2
Product data sheet
Fig 5. DC current gain as a function of collector
Fig 7. Base-emitter voltage as a function of collector
V
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
(V)
1000
FE
BE
800
600
400
200
1.6
1.2
0.8
0.4
0
0
10
10
V
current; typical values
V
current; typical values
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 2 V
= 2 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
10
10
3
3
10
10
006aaa274
006aaa275
I
I
4
4
C
C
(mA)
(mA)
Rev. 02 — 18 February 2008
10
10
5
5
Fig 6. Collector current as a function of
Fig 8. Base-emitter saturation voltage as a function of
V
(A)
I
(1) T
(2) T
(3) T
BEsat
C
(V)
1.6
1.2
0.8
0.4
14
12
10
8
6
4
2
0
0
10
T
collector-emitter voltage; typical values
I
collector current; typical values
C
0
amb
amb
amb
amb
/I
1
B
40 V, 4 A NPN low V
= 20
= 25 C
= 55 C
= 25 C
= 100 C
1
0.4
10
0.8
(1)
(2)
(3)
10
I
2
B
PBSS302ND
(mA) = 400
1.2
CEsat
10
3
360
320
280
240
200
160
120
80
40
© NXP B.V. 2008. All rights reserved.
1.6
(BISS) transistor
10
006aaa280
006aaa344
V
I
4
CE
C
(mA)
(V)
2.0
10
5
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