HN1J02FU TOSHIBA Semiconductor CORPORATION, HN1J02FU Datasheet - Page 2

• Manufacturer Part Number: HN1J02FU
• Description: P Channel Mos Type High Speed Switching, Analog Switch Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Equivalent Circuit
Gate leakage current
Drain-source breakdown
voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Characteristic
Turn-on time
Turn-off time
(Top View)
V
R
(Ta = 25°C) (Q1, Q2 Common)
Symbol
(BR) DSS
DS (ON)
I
I
C
C
|Y
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
th
fs
|
Circuit
Test
―
―
―
―
―
―
―
―
―
―
―
V
I
V
V
V
I
V
f = 1MHz
V
f = 1MHz
V
f = 1MHz
V
V
V
V
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
DD
GS
= −100μA, V
= −10mA, V
2
= −20V, V
= −3V, I
= −3V, I
= −3V, V
= −3V, V
= −3V, V
= −7V, V
= −3V, I
= 0~−2.5V
= −3V, I
= 0~−2.5V
Test Condition
D
D
D
D
GS
GS
GS
DS
GS
= −0.1mA
= −10mA
GS
= −10mA,
= −10mA,
GS
= 0
= 0,
= 0,
= 0,
= −2.5V
= 0
= 0
Marking
−0.5
−20
Min
15
―
―
―
―
―
―
―
―
10.4
0.15
0.13
Typ.
2.8
8.4
20
―
―
―
―
―
HN1J02FU
2007-11-01
−1.5
Max
−1
−1
―
―
40
―
―
―
―
―
Unit
mS
μA
μA
pF
pF
pF
μs
μs
V
V
Ω