HN1K06FU TOSHIBA Semiconductor CORPORATION, HN1K06FU Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_sml.jpg)
HN1K06FU
Manufacturer Part Number
HN1K06FU
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN1K06FU.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical Characteristics
Equivalent Circuit
(Q1, Q2 common)
Switching Time Test Circuit
2.5 V
0
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Test circuit
10 μs
V
IN
6
1
IN
Characteristic
Q1
5
2
I
(top view)
D
Q2
4
3
V
OUT
DD
(Ta = 25°C) (Q1, Q2 common)
V
D.U. < = 1%
V
(Z
Common Source
Ta = 25°C
DD
IN
out
: t
V
= 3 V
R
r
= 50 Ω)
Symbol
, t
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
f
GSS
DSS
V
t
t
oss
on
off
< 5 ns
iss
rss
th
fs
⎪
V
I
V
V
V
I
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
DD
GS
= 100 μA, V
= 10 mA, V
2
= 10 V, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, I
= 0 to 2.5 V
= 3 V, I
= 0 to 2.5 V
Marking
(b) V
(c) V
Test Condition
6
1
D
D
D
D
GS
GS
GS
GS
= 0.1 mA
= 10 mA
GS
= 10 mA,
= 10 mA,
DS
V
GS
V
=0 V, f = 1 MHz
=0 V, f = 1 MHz
=0 V, f = 1 MHz
OUT
IN
GS
DS
KJ
= 2.5 V
5
2
= 0 V
= 0 V
= 0 V
4
3
V
2.5 V
DS (ON)
V
DD
0
Min
0.5
20
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
on
10%
Typ.
0.28
0.34
90%
3.5
5.3
t
62
14
16
⎯
⎯
⎯
⎯
r
HN1K06FU
t
off
2007-11-01
90%
Max
1.5
6.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
10%
t
f
Unit
mS
μA
μA
pF
pF
pF
μs
Ω
V
V