HN1K06FU TOSHIBA Semiconductor CORPORATION, HN1K06FU Datasheet - Page 2

• Manufacturer Part Number: HN1K06FU
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Equivalent Circuit
(Q1, Q2 common)
Switching Time Test Circuit
2.5 V
0
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Test circuit
10 μs
V
IN
6
1
IN
Characteristic
Q1
5
2
I
(top view)
D
Q2
4
3
V
OUT
DD
(Ta = 25°C) (Q1, Q2 common)
V
D.U. < = 1%
V
(Z
Common Source
Ta = 25°C
DD
IN
out
: t
V
= 3 V
R
r
= 50 Ω)
Symbol
, t
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
f
GSS
DSS
V
t
t
oss
on
off
< 5 ns
iss
rss
th
fs
⎪
V
I
V
V
V
I
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
DD
GS
= 100 μA, V
= 10 mA, V
2
= 10 V, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, I
= 0 to 2.5 V
= 3 V, I
= 0 to 2.5 V
Marking
(b) V
(c) V
Test Condition
6
1
D
D
D
D
GS
GS
GS
GS
= 0.1 mA
= 10 mA
GS
= 10 mA,
= 10 mA,
DS
V
GS
V
=0 V, f = 1 MHz
=0 V, f = 1 MHz
=0 V, f = 1 MHz
OUT
IN
GS
DS
KJ
= 2.5 V
5
2
= 0 V
= 0 V
= 0 V
4
3
V
2.5 V
DS (ON)
V
DD
0
Min
0.5
20
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
on
10%
Typ.
0.28
0.34
90%
3.5
5.3
t
62
14
16
⎯
⎯
⎯
⎯
r
HN1K06FU
t
off
2007-11-01
90%
Max
1.5
6.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
10%
t
f
Unit
mS
μA
μA
pF
pF
pF
μs
Ω
V
V