HN1L02FU TOSHIBA Semiconductor CORPORATION, HN1L02FU Datasheet
![no-image](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_sml.jpg)
HN1L02FU
Available stocks
Related parts for HN1L02FU
HN1L02FU Summary of contents
Page 1
... Rating Unit V − −7 V GSS I − (Q1, Q2 Common) (Ta 25°C) Symbol Rating Unit P 200 150 ° −55~150 °C stg 1 HN1L02FU Unit in mm ― JEDEC EIAJ ― 2-2J1C TOSHIBA Weight: 6.8mg Marking Equivalent Circuit (Top View) 2007-11-01 ...
Page 2
... V = −3V oss f = 1MHz V = −3V −10mA 0~−2. −3V −10mA off V = 0~−2. HN1L02FU Min Typ. Max Unit ― ― 1 μA 20 ― ― V ― ― 1 μA 0.5 ― 1 ― ― mS ― Ω ― ...
Page 3
... Q1 (Nch MOS FET) Switching Time Test Circuit 3 HN1L02FU 2007-11-01 ...
Page 4
... Q1 (Nch MOS FET) 4 HN1L02FU 2007-11-01 ...
Page 5
... Q2 (Pch MOS FET) Switching Time Test Circuit 5 HN1L02FU 2007-11-01 ...
Page 6
... Q2 (Pch MOS FET) (Q1, Q2 common) 6 HN1L02FU 2007-11-01 ...
Page 7
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 HN1L02FU 20070701-EN GENERAL 2007-11-01 ...