FMA80N10T2 Fuji Electric holdings CO.,Ltd, FMA80N10T2 Datasheet - Page 16
FMA80N10T2
Manufacturer Part Number
FMA80N10T2
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.FMA80N10T2.pdf
(19 pages)
- Current page: 16 of 19
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Fuji Electric Device Technology Co.,Ltd.
1000
100
10
10
10
10
10
0.1
10
1
5
4
3
2
1
10
0.0
-1
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
0
0.5
s pulse test,Tch=25
VSD [V]
VDS [V]
10
1
1.0
MS5F6117
10
C
Coss
Ciss
Crss
2
10
1.5
3
16 / 19
H04-004-03
a
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