FMA80N10T2 Fuji Electric holdings CO.,Ltd, FMA80N10T2 Datasheet - Page 4

• Manufacturer Part Number: FMA80N10T2
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

Dynamic Ratings
Forward
Input Capacitance
Output Capacitance
Reverse Transfer
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Reverse Diode
Diode Forward
Reverse Recovery
Reverse Recovery
7.Thermal Resistance
Channel to Case
Channel to Ambient
Note *1 : Tch  150°C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25  C,I
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : I
Fuji Electric Device Technology Co.,Ltd.
Transconductance g
Description
Description
Description
E
See to the 'Avalanche Energy' graph of page 17/19.
See to the 'Maximum Transient Thermal impedance' graph of page 19/19.
F
Capacitance Crss
AS
 -I
On-Voltage V
limited by maximum channel temperature and avalanche current.
D
,-di/dt=50A/ s,Vcc BV
Charge Qrr
Time trr
Ciss
Coss
td(on)
tr
td(off)
tf
Q
Q
Q
Rth(ch-c)
Rth(ch-a)
Symbol
fs
Symbol
SD
G
GS
GD
AS
=32A,L=853  H,Vcc=48V,R
I
V
V
V
f=1MHz
V
V
I
R
V
I
V
I
V
I
V
-di/dt=100A/ s
T
D
D
D
F
F
DS
DS
GS
cc
GS
cc
GS
=80A
GS
=80A
GS
ch
GS
=40A
=40A
=80A
DSS
Symbol
=48V
=48V
=25  C
=25V
=25V
=0V
=10V
=10V
=0V
=0V
=10
,Tch 150 C
Conditions
Conditions
T
ch
=25  C
G
= 5 0 Ω , S e e F i g . 1 a n d F i g . 2
MS5F6117
min.
min.
min.
15
-
-
-
-
-
-
-
-
-
-
-
-
-
6000
1.00
0.52
740
370
120
120
120
typ.
typ.
typ.
30
33
44
60
30
34
1.316
9000
1110
max.
max.
max.
49.5
1.50
555
180
180
66
90
45
51
58
-
-
-
4 / 19
H04-004-03
 C/W
 C/W
Unit
Unit
Unit
 C
nC
pF
ns
ns
S
V
a