DIM100PHM33-F000 Dynex Semiconductor, DIM100PHM33-F000 Datasheet - Page 5

• Manufacturer Part Number: DIM100PHM33-F000
• Description: Igbt Modules - 3300v Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
T
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
case
case
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
E
t
t
E
Q
Q
Q
d(off)
d(on)
d(off)
d(on)
I
I
t
OFF
t
REC
t
OFF
t
REC
ON
ON
rr
rr
f
r
f
r
rr
rr
g
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Gate charge
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Parameter
Parameter
R
R
I
C
I
G(ON)
C
G(ON)
= 100A, V
= 100A, V
= 16.5 , C
= 16.5 , C
I
C
F
I
R
F
R
ge
= 100A, V
G(ON)
Test Conditions
= 100A, V
G(ON)
dI
Test Conditions
= 33nF, L ~ 100nH
dI
V
F
GE
V
V
F
/dt = 800A/ s
GE
V
C
/dt = 800A/ s
CE
L ~ 100nH
= R
GE
I
CE
= R
C
= 15V, V
I
GE
ge
C
= 15V, V
= 1800V
ge
= 100A
= 15V
= 1800V
ge
= 100A
= 33nF
G(OFF)
= 15V
G(OFF)
= 33nF, L ~ 100nH
R
= 33nF, L ~ 100nH
R
= 1800V,
= 1800V,
= 33
= 33
CE
CE
= 1800V,
= 1800V,
DIM100PHM33-F000
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2200
1150
1950
1180
Typ.
Typ.
190
135
280
200
170
110
225
150
2.5
65
85
65
40
75
40
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C
C
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