DIM100PHM33-F000 Dynex Semiconductor, DIM100PHM33-F000 Datasheet - Page 6

• Manufacturer Part Number: DIM100PHM33-F000
• Description: Igbt Modules - 3300v Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

DIM100PHM33-F000
TYPICAL CHARACTERISTICS
6/9
200
150
100
200
150
100
50
Fig. 5 Typical switching energy vs collector current
50
0
0
0.0
0
Conditions:
T
R
R
C
V
V
Common emitter
T
V
busbars and not the
auxiliary terminals
c
g(on)
g(off)
ge
cc
ge
case
ce
= 125˚C,
= 1800V,
= 33nF,
= ±15V
10
is measured at power
Fig. 3 Typical output characteristics
= 16.5 Ohms,
= 33 Ohms
= 25˚C
1.0
20
Collector-emitter voltage, V
30
2.0
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
40
50
3.0
60
4.0
70
ce
- (V)
80
5.0
E
E
E
on
off
rec
90
(mJ)
(mJ)
(mJ)
100
6.0
200
150
100
700
600
500
400
300
200
100
50
Fig. 6 Typical switching energy vs gate resistance
0.0
0
0
0
Common emitter
T
V
busbars and not the
auxiliary terminals
Conditions:
T
I
V
C
V
C
case
ce
c
cc
ge
ge
= 100A,
= 125˚C,
is measured at power
= 1800V,
= 33nF,
= ±15V
1.0
Fig. 4 Typical output characteristics
= 125˚C
16
Collector-emitter voltage, V
2.0
32
3.0
48
4.0
www.dynexsemi.com
64
5.0
ce
80
- (V)
6.0
E
E
E
96
7.0
on
off
rec
(mJ)
(mJ)
(mJ)
8.0
112