BF620-622 NXP Semiconductors, BF620-622 Datasheet - Page 7

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BF620-622

Manufacturer Part Number
BF620-622
Description
Bf620; Bf622 Npn High-voltage Transistors
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
CHARACTERISTICS
T
2004 Dec 14
I
I
h
V
C
f
SYMBOL
amb
CBO
EBO
T
FE
CEsat
re
NPN high-voltage transistors
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
PARAMETER
I
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0 A; V
= 0 A; V
= 0 A; V
= 25 mA; V
= 30 mA; I
= i
= 10 mA; V
c
= 0 A; V
7
CB
CB
EB
B
CONDITIONS
= 200 V
= 200 V; T
= 5 V
CE
CE
= 5 mA
CE
= 20 V
= 30 V; f = 1 MHz
= 10 V; f = 100 MHz
j
= 150 C
50
60
MIN.
BF620; BF622
Product specification
10
10
50
600
1.6
MAX.
nA
nA
mV
pF
MHz
UNIT
A

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