PHE13005X NXP Semiconductors, PHE13005X Datasheet - Page 2

• Manufacturer Part Number: PHE13005X
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHE13005X_1
Product data sheet
Type number
PHE13005X
Symbol
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
CESM
CBO
CEO
tot
stg
j
Ordering information
Limiting values
Parameter
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
Package
Name
TO-220F
Fig 1.
With heatsink compound
Normalized total power dissipation as a function of heatsink temperature
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3-lead TO-220 ‘full pack’
P
der
=
----------------------- -
P
tot 25 C
P
tot
P
(%)
120
der
Rev. 01 — 15 May 2008
80
40
0
0
Conditions
V
open emitter
open base
DC
DC
T
100 %
h
BE
= 0 V
25 C; see
50
Figure 1
100
150
Silicon diffused power transistor
T
03aa13
h
( C)
200
Min
-
-
-
-
-
-
-
-
-
65
PHE13005X
© NXP B.V. 2008. All rights reserved.
Max
700
700
400
4
8
2
4
26
+150
150
Version
SOT186A
Unit
V
V
V
A
A
A
A
W
C
C
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