BUW85 NXP Semiconductors, BUW85 Datasheet

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BUW85

Manufacturer Part Number
BUW85
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
DATA SHEET
BUW84; BUW85
Silicon diffused power transistors
DISCRETE SEMICONDUCTORS
1997 Aug 14

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BUW85 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BUW84; BUW85 Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 ...

Page 2

... CONDITIONS open base 200 mA; see Fig see Figs 4 and 5 see Figs 4 and see Fig.8 mb resistive load; see Fig.11 PARAMETER 1 Product specification BUW84; BUW85 DESCRIPTION MBB008 TYP. MAX. UNIT 800 V 1000 V 400 V 450 ...

Page 3

... see Fig. 100 mA see Fig. 200 mA MHz 2 Product specification BUW84; BUW85 MIN. MAX. UNIT 800 V 1000 V 400 V 450 0. ...

Page 4

... Bon I = 400 mA; V Boff handbook, halfpage 50 V (mA) 250 200 horizontal oscilloscope 100 vertical 1 MGE252 Fig.3 3 Product specification BUW84; BUW85 MIN. TYP. MAX. 0.2 0.5 = 250 3.5 = 250 V CC 0.4 = 250 V CC 1.4 = 250 min V CEOsust Oscilloscope display for collector-emitter sustaining voltage. ...

Page 5

... Second breakdown limits. 1997 Aug 100 s 200 s 500 s ( III and Fig.4 Forward bias SOAR. 4 Product specification BUW84; BUW85 MGB938 (V) 100 and t 0 ...

Page 6

... Second breakdown limits. 1997 Aug 100 s 200 s (2) 500 III and Fig.5 Forward bias SOAR. 5 Product specification BUW84; BUW85 MGB937 (V) 100 and t 0 ...

Page 7

... Fig.7 Collector-emitter saturation voltage as a function of base current; typical values. 1997 Aug Fig.6 Transient thermal impedance. (4) 0.1 0.15 = 0 solid line: typical values; dotted line: maximum values Product specification BUW84; BUW85 MGB865 (ms) MGB908 0.2 0.25 ...

Page 8

... Fig.9 handbook, halfpage MGB879 90 10 (A) Fig.11 Switching time waveforms with 7 Product specification BUW84; BUW85 MGB904 (1) (2) (3) 0 100 200 I B (mA) Base-emitter saturation voltage as a function of emitter current; typical values. MBB731 off ...

Page 9

... Philips Semiconductors Silicon diffused power transistors handbook, full pagewidth 1997 Aug BD139 200 100 30 100 BD140 Fig.12 Test circuit resistive load. 8 Product specification BUW84; BUW85 680 F 250 V CC 100 F 250V D.U.T. MGE253 680 F ...

Page 10

... Terminal dimensions within this zone are uncontrolled to allow for body and terminal irregularities. OUTLINE VERSION IEC SOT82 1997 Aug 2 scale ( max. 16.5 3.1 1.5 3.9 4.58 2.54 2.29 15.3 0.9 3.5 2.5 REFERENCES JEDEC EIAJ 9 Product specification BUW84; BUW85 w 0.254 EUROPEAN ISSUE DATE PROJECTION 97-06-11 SOT82 ...

Page 11

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 BUW84; BUW85 10 Product specification ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...

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