TPD4123AK TOSHIBA Semiconductor CORPORATION, TPD4123AK Datasheet - Page 12

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TPD4123AK

Manufacturer Part Number
TPD4123AK
Description
High Voltage Monolithic Silicon Power Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Description of Protection Function
Timing Chart of Under voltage protection and SD Function
Safe Operating Area
Note 1: The above safe operating areas are Tj = 135 °C (Figure 1).
SD
LIN
HIN
V
V
LO
HO
DIAG
BS
CC
Note: The above timing chart is considering the delay time
(1) Under voltage protection
(2) Thermal shutdown
(3) SD pin
1.0
0
This product incorporates under voltage protection circuits to prevent the IGBT from operating in
unsaturated mode when the V
When the V
shut down regardless of the input. This protection function has hysteresis. When the V
reaches 0.5 V higher than the shutdown voltage (V
restored and the IGBT is turned on again by the input. DIAG output is reversed at the time of V
under-voltage protection. When the V
reversed.
When the V
When the V
IGBT is turned on again by the input signal.
This product incorporates a thermal shutdown circuit to protect itself against the abnormal state when its
temperature rises excessively.
When the temperature of this chip rises to the internal setting TSD due to external causes or internal heat
generation, all IGBT outputs shut down regardless of the input. This protection function has hysteresis
ΔTSD (=50°C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is automatically restored and
the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the IGBT,
for example, the differences in distance from the detection location in the IGBT (the source of the heat)
cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise
higher than the thermal shutdown temperature when the circuit started to operate.
SD pin is the input signal pin to shut down the internal output IGBT. Output of all IGBT is shuted down after
delay times (2 μs typ.) when "L" signal is inputed to the SD pin from external circuit (MCU etc.). It is
possible to shut down IC when overcurrent and others is detected by external circuit. Shut down state is
released by all of IC input signal "L". At open state of SD pin, shut down function can not operate.
0
Power supply voltage V
Figure 1 SOA at Tj = 135 °C
t
on
BS
BS
CC
supply voltage drops V
supply voltage reaches 0.5 V higher than the shutdown voltage (V
power supply falls to this product internal setting V
t
off
BB
450
(V)
t
on
CC
voltage or the V
t
off
BS
CC
UVD (=9 V typ.), the high-side IGBT output shuts down.
power supply is less than 7 V, DIAG output isn't sometimes
12
BS
voltage drops.
CC
UVR (=11.5 V typ.)), this product is automatically
CC
UVD (=11 V typ.), all IGBT outputs
BS
UVR (=9.5 V typ.)), the
TPD4123AK
CC
2008-05-14
power supply
CC

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