BB503M Renesas Electronics Corporation., BB503M Datasheet

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BB503M

Manufacturer Part Number
BB503M
Description
Build In Biasing Circuit Mos Fet Ic Uhf/vhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
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Part Number:
BB503M
Manufacturer:
SKYWORK
Quantity:
167
Part Number:
BB503MCS-TL
Manufacturer:
MIT
Quantity:
142
Part Number:
BB503MCS-TL
Manufacturer:
HITACHI/日立
Quantity:
20 000
Features
Outline
Notes:
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.8 dB typ. at f = 900 MHz
High gain; PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod)
1.
2.
Marking is “CS–”.
BB503M is individual type number of HITACHI BBFET.
Build in Biasing Circuit MOS FET IC
MPAK-4
UHF RF Amplifier
BB503M
3
2
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-811B(Z)
3rd. Edition
Jul. 1999

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BB503M Summary of contents

Page 1

... High gain typ 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 Notes: 1. Marking is “CS–”. 2. BB503M is individual type number of HITACHI BBFET. BB503M UHF RF Amplifier Source 4 2. Gate1 3. Gate2 4 ...

Page 2

... BB503M Absolute Maximum Ratings ( Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics ( Item Symbol Drain to source breakdown V (BR)DSS voltage Gate1 to source breakdown V (BR)G1SS voltage Gate2 to source breakdown ...

Page 3

... Main Characteristics Test Circuit for Operating Items ( Gate 0.3 V AGC Input |yfs|, Ciss, Coss, Crss, NF, PG) D(op Gate 1 Drain Source Application Circuit RFC BBFET BB503M V G1 Output 3 ...

Page 4

... BB503M 900MHz Power Gain, Noise Test Circuit Input ( RFC C3 Output ( Variable Capacitor (10pF MAX) : Disk Capacitor (1000pF) : Air Capacitor (1000pF 4.7 k L2: ...

Page 5

... Gate1 Voltage V (V) G1 Typical Output Characteristics G2S 200 1 2 Drain to Source Voltage Drain Current vs. Gate1 Voltage Gate1 Voltage BB503M ( ( ...

Page 6

... BB503M Drain Current vs. Gate1 Voltage Gate1 Voltage V G1 Forward Transfer Admittance vs. Gate1 Voltage kHz Gate1 Voltage V 6 Forward Transfer Admittance ...

Page 7

... Noise Figure vs. Gate Resistance G2S f = 900 MHz 100 20 ) Gate Resistance R Noise Figure vs. Drain Current G2S R = variable 900 MHz Drain Current I BB503M = 100 ( (mA ...

Page 8

... BB503M Drain Current vs. Gate Resistance G2S Gate Resistance R G Noise Figure vs. Gate2 to Source Voltage 900 MHz Gate2 to Source Voltage 100 (k ) Gate2 to Source Voltage V ...

Page 9

... Gain Reduction vs. Gate2 to Source Voltage G2S Gate2 to Source Voltage V G2S BB503M 0 (V) 9 ...

Page 10

... BB503M S11 Parameter vs. Frequency –.2 –.4 –.6 –1.5 –.8 –1 Test Condition G2S 1000 MHz (50 MHz step) S12 Parameter vs. Frequency Scale: 0.002 / div. 90° 120° 150° ...

Page 11

... BB503M S22 MAG ANG 0.995 –1.9 0.998 –3.9 0.997 –5.8 0.996 –8.0 0.994 –10.0 0.993 –11.8 0.991 –13.9 0.989 –15.8 0.986 –17.8 0.984 –19.6 0.981 – ...

Page 12

... BB503M Package Dimensions 2.95 0.2 1.9 0.95 0.95 + 0.1 0.4 0.4 — 0. 0.1 0.4 0.6 — 0.05 0.95 0.85 1 0.1 0.16 — 0.06 + 0.1 — 0.05 0—0.1 + 0.1 — 0.05 Hitachi Code Unit: mm MPAK—4 SC—61AA EIAJ JEDEC ...

Page 13

... Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Hitachi Asia Ltd. Telex: 40815 HITEC HX Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. BB503M 13 ...

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