BB503M Renesas Electronics Corporation., BB503M Datasheet - Page 7

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BB503M

Manufacturer Part Number
BB503M
Description
Build In Biasing Circuit Mos Fet Ic Uhf/vhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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30
25
20
15
10
30
25
20
15
10
5
0
5
0
0
10
V
V
R = variable
f = 900 MHz
Power Gain vs. Drain Current
V
V
f = 900 MHz
Power Gain vs. Gate Resistance
DS
G2S
G
DS
G2S
Gate Resistance R
Drain Current I
= V
5
= 4 V
= V
= 4 V
20
G1
G1
= 5 V
= 5 V
10
D
G
50
(mA)
15
(k
)
20
100
4
3
2
1
0
4
3
2
1
0
10
0
V
V
R = variable
f = 900 MHz
Noise Figure vs. Gate Resistance
V
V
f = 900 MHz
Gate Resistance R
Noise Figure vs. Drain Current
DS
G2S
G
DS
G2S
Drain Current I
= V
5
= V
= 4 V
20
= 4 V
G1
G1
= 5 V
= 5 V
10
D
G
50
(mA)
15
(k
BB503M
)
100
20
7

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