BLW97 NXP Semiconductors, BLW97 Datasheet - Page 3

• Manufacturer Part Number: BLW97
• Description: Hf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
(dissipation = 120 W; T
August 1986
Collector-emitter voltage (peak value)
Emitter-base voltage (open collector)
Collector current
Total d.c. power dissipation at T
R.F. power dissipation
Storage temperature
Operating junction temperature
handbook, halfpage
From junction to mounting base
From junction to mounting base
From mounting base to heatsink
HF power transistor
V
open base
average
peak value; f
f
(d.c. dissipation)
(r.f. dissipation)
BE
(A)
I C
10
1 MHz; T
= 0
10
1
2
1
h
= 25 C
1 MHz
Fig.2 D.C. SOAR.
T h = 70 C
h
= 25 C i.e. T
10
h
= 25 C
V CE (V)
mb
T mb = 25 C
= 49 C)
MGP703
10
2
3
handbook, halfpage
I Continuous d.c. operation
II Continuous r.f. operation (f
III Short-time operation during mismatch; (f
Fig.3
P tot
(W)
350
250
150
50
0
R
R
R
V
V
I
P
P
T
V
I
T
Power/temperature derating curves.
th j-mb(dc)
th j-mb(rf)
th mb-h
C(AV)
CM
stg
j
CESM
CEO
EBO
tot(d.c.)
tot(rf)
40
=
=
=
1 Mhz).
max.
max.
max.
max.
max.
max.
max.
max.
80
65 to
Product specification
1 MHz).
T h ( C)
190 W
230 W
150
200
0,63 K/W
0,48 K/W
0,20 K/W
MGP704
65 V
33 V
15 A
50 A
BLW97
4 V
120
C
C