BLW98 NXP Semiconductors, BLW98 Datasheet - Page 5

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BLW98

Manufacturer Part Number
BLW98
Description
Uhf Linear Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
CHARACTERISTICS
T
Notes
1. Measured under pulse conditions: t
2. Measured under pulse conditions: t
August 1986
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
D.C. current gain
Collector-emitter saturation voltage
Transition frequency at f = 500 MHz
Collector capacitance at f = 1 MHz
Feedback capacitance at f = 1 MHz
Collector-stud capacitance
handbook, halfpage
j
= 25 C unless otherwise specified
UHF linear power transistor
V
open base, I
open collector, I
I
I
I
I
C
C
E
C
I
BE
E
= I
= 850 mA; V
= 500 mA; I
= 50 mA; V
10
10
(A)
= 850 mA; V
I C
= 0; I
10
e
1
1
2
0.5
= 0; V
Fig.5 Typical values; V
C
= 10 mA
C
CB
CE
B
= 25 mA
(1)
CE
= 25 V
= 100 mA
E
CB
= 25 V
T h = 70 C
= 5 mA
= 25 V
= 25 V
1
1.5
CE
(1)
25 C
(2)
= 25 V.
p
p
V BE (V)
300 s;
50 s;
MGP720
2
0,01.
0,02.
5
V
V
V
h
V
f
C
C
C
T
FE
(BR)CES
(BR)CEO
(BR)EBO
CEsat
c
re
cs
typ.
typ.
typ.
typ.
typ.
typ.
Product specification
0,25 V
3,5 V
2,5 GHz
1,2 pF
50 V
27 V
15
40
24
30
15 pF
pF
pF
BLW98

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