PZ1418 NXP Semiconductors, PZ1418 Datasheet - Page 3
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PZ1418
Manufacturer Part Number
PZ1418
Description
Pz1418b30u Npn Microwave Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PZ1418.pdf
(12 pages)
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1997 Nov 13
handbook,
V
V
V
V
I
P
T
T
T
C
stg
j
sld
CBO
CEO
CES
EBO
tot
NPN microwave power transistor
SYMBOL
P tot
(W)
Fig.2
50
40
30
20
10
0
0
Power derating curve as a function of
mounting base temperature.
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
50
PARAMETER
100
150
T mb ( C)
MGD970
200
open emitter
open base
R
open collector
T
mb
BE
= 0
3
75 C
CONDITIONS
65
MIN.
PZ1418B30U
40
15
35
3
4
45
+200
200
235
Product specification
MAX.
V
V
V
V
A
W
C
C
C
UNIT