2MBI200U4H-170 Fuji Electric holdings CO.,Ltd, 2MBI200U4H-170 Datasheet - Page 10

• Manufacturer Part Number: 2MBI200U4H-170
• Description: Igbt Module
• Manufacturer: Fuji Electric holdings CO.,Ltd

10000
10000
1000
1000
200
150
100
100
100
50
10
10
0
0.1
0.1
Vcc=900V, Ic=200A, VGE=±15V, Tj= 125°C
0
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj= 25°C
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=200A, VGE=±15V, Tj= 25°C
Switching loss vs. Gate resistance (typ.)
100
Gate resistance : RG [Ω]
Gate resistance : RG [Ω]
ton
toff
tr
tf
Collector current : Ic [A]
1.0
1.0
200
10.0
10.0
300
Eon
ton
toff
tr
tf
Eoff
Err
100.0
100.0
400
10000
1000
600
500
400
300
200
100
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C
100
100
10
0
75
50
25
0
0
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj=125°C
Switching time vs. Collector current (typ.)
0
Switching loss vs. Collector current (typ.)
MS5F6136
0
toff
Reverse bias safe operating area (max.)
Vcc=900V, VGE=±15V, Rg=2.2Ω
Collector-Emitter voltage : VCE [V]
100
100
500
Collector current : Ic [A]
Collector current : Ic [A]
200
200
1000
300
300
Eoff(25°C)
1500
ton
tr
tf
Eoff(125°C)
Eon(125°C)
Err(125°C)
Err(25°C)
Eon(25°C)
H04-004-03a
10
13
400
400