2MBI200U4H-170 Fuji Electric holdings CO.,Ltd, 2MBI200U4H-170 Datasheet - Page 9

• Manufacturer Part Number: 2MBI200U4H-170
• Description: Igbt Module
• Manufacturer: Fuji Electric holdings CO.,Ltd

1000.0
500
400
300
200
100
500
400
300
200
100
100.0
10.0
0
0
1.0
0.1
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
0
0
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
Collector-Emitter voltage : VCE [V]
VGE=15V / chip
10
Tj= 25°C / chip
VGE=20V 15V
2
2
Tj=25°C
3
3
20
12V
Cies
Coes
Cres
Tj=125°C
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
500
400
300
200
100
8
6
4
2
0
0
Collector current vs. Collector-Emitter voltage (typ.)
0
5
0
MS5F6136
Vcc=900V， Ic=200A，Tj= 25°C
100
Dynamic Gate charge (typ.)
VCE
Collector-Emitter voltage : VCE [V]
1
Gate-Emitter voltage : VGE [V]
10
200
Tj=25°C / chip
Gate charge : Qg [nC]
Tj= 125°C/ chip
300
2
15
400
VGE=20V 15V
3
VGE
500
20
Ic=400A
Ic=200A
Ic=100A
4
600
H04-004-03a
9
12V
10V
8V
700
13
25
5