SQM110N04-03L Vishay, SQM110N04-03L Datasheet

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SQM110N04-03L

Manufacturer Part Number
SQM110N04-03L
Description
N-channel 40 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verfication ongoing.
Document Number: 64719
S09-0966-Rev. A, 01-Jun-09
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
DS(on)
(A)
(V)
(Ω) at V
(Ω) at V
G
Top View
TO-263
GS
GS
= 10 V
= 4.5 V
D
b
S
a
b
N-Channel 40 V (D-S) 175 °C MOSFET
G
N-Channel MOSFET
a
0.0035
0.0053
Single
110
40
C
D
S
= 25 °C, unless otherwise noted
PCB Mount
L = 0.1 mH
T
Automotive
T
T
T
C
C
C
A
= 125 °C
= 25 °C
= 25 °C
= 25 °C
c
TO-263
SQM110N04-03L-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
• Compliant to RoHS Directive 2002/95/EC
• Find out more about Vishay’s Automotive Grade Product
Definition
Requirements at:
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
www.vishay.com/applications
d
- 55 to + 175
LIMIT
LIMIT
0.65
± 20
3.75
110
102
110
300
151
230
40
55
40
SQM110N04-03L
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
V
A
A
1

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SQM110N04-03L Summary of contents

Page 1

... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQM110N04-03L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 40 V ± 20 110 102 A 110 300 151 230 W 3. 175 °C LIMIT UNIT 40 ° ...

Page 2

... SQM110N04-03L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... DS Capacitance Document Number: 64719 S09-0966-Rev. A, 01-Jun- °C, unless otherwise noted ° °C 125 ° SQM110N04-03L Vishay Siliconix 250 200 150 100 T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SQM110N04-03L Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature www.vishay.com °C, unless otherwise noted A 100 10 100 125 150 175 100 T - Junction Temperature (°C) J Drain Source Breakdown vs ...

Page 5

... R DS(on °C C Single Pulse 0.1 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area SQM110N04-03L Vishay Siliconix 100 I ( ° ( 150 ° 0.1 0.00001 0.0001 0.001 0.01 0.1 t (s) in Avalanche Current vs. Time 10 µ ...

Page 6

... SQM110N04-03L Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note The characteristics shown in the graph - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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