SQ3418EEV Vishay, SQ3418EEV Datasheet
SQ3418EEV
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SQ3418EEV Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJF SQ3418EEV Vishay Siliconix ® Power MOSFET d Product Requirements at: LIMIT UNIT 40 V ± 12 7.4 4.0 2 2 175 °C LIMIT UNIT 62.5 °C/W 35 www ...
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... SQ3418EEV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... ° 0. ° °C C 0.09 0.06 0.03 0. SQ3418EEV Vishay Siliconix - 150 ° ° - Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage ° 125 ° ...
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... SQ3418EEV Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.7 1.4 1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.25 0.20 0.15 0. 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-Source Voltage www.vishay.com °C, unless otherwise noted A 100 0.01 0.001 100 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65357. Document Number: 65357 S09-1860-Rev. A, 21-Sep- Square Wave Pulse Duration (s) Normalized thermal Transient Impedance, Junction-to-Foot SQ3418EEV Vishay Siliconix -1 1 www.vishay.com ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...