SQ3418EEV Vishay, SQ3418EEV Datasheet - Page 4

• Manufacturer Part Number: SQ3418EEV
• Description: N-channel 40 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

SQ3418EEV
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.25
0.20
0.15
0.10
0.05
0.00
2.0
1.7
1.4
1.1
0.8
0.5
- 50
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
- 25
I
D
= 5 A
2
V
0
GS
T
J
- Junction Temperature (°C)
T
- Gate-to-Source Voltage (V)
J
25
= 25 °C
4
V
GS
50
= 10 V
T
J
= 150 °C
75
6
100
54
48
45
60
57
51
Drain-Source Breakdown vs. Junction Temperature
A
- 50
= 25 °C, unless otherwise noted
125
8
- 25
150
I
D
0
T
175
= 1 mA
10
J
- Junction Temperature (°C)
25
50
75
100
0.001
-0.3
-0.6
-0.9
-1.2
0.01
100
0.6
0.3
0.0
0.1
10
125
1
0.0
- 50
150
- 25
Source-Drain Diode Forward Voltage
0.2
175
T
V
J
0
SD
= 150 °C
- Source-to-Drain Voltage (V)
0.4
T
25
Threshold Voltage
J
- Temperature (°C)
50
0.6
I
D
S09-1860-Rev. A, 21-Sep-09
= 250 µA
75
Document Number: 65357
T
0.8
I
100
J
D
= 25 °C
= 5 mA
125
1.0
150
1.2
175