SQD50N06-09L Vishay, SQD50N06-09L Datasheet - Page 4

• Manufacturer Part Number: SQD50N06-09L
• Description: N-channel 60 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

SQD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.05
0.04
0.03
0.02
0.01
0.00
2.5
2.0
1.5
1.0
0.5
0.0
- 50 - 25
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
V
I
D
GS
Graph to be available
= 20 A
= 10 V
2
upon completion
0
V
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
of testing
4
50
75
6
100
A
125
= 25 °C, unless otherwise noted
8
150
175
10
100
56
52
48
44
40
10
- 50
1
0
- 25
Source Drain Diode Forward Voltage
Graph to be available
0.3
T
upon completion
J
V
0
= 150 °C
SD
T
Drain Source Breakdown
vs. Junction Temperature
J
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
25
of testing
0.6
50
75
S-Pending-Rev. A, 23-Oct-08
0.9
T
Document Number: 68901
J
100
= 25 °C
125
1.2
150
175
1.5