SQD50P04 Vishay, SQD50P04 Datasheet - Page 3

• Manufacturer Part Number: SQD50P04
• Description: P-channel 40 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 65157
S09-1315-Rev. A, 13-Jul-09
100
120
100
80
60
40
20
80
60
40
20
0
0
0
0
20
1
V
V
DS
GS
V
Output Characteristics
GS
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Transconductance
= 10 V thru 5 V
40
2
60
3
T
C
A
= - 55 °C
80
4
= 25 °C, unless otherwise noted
4 V
25 °C
125 °C
3 V
2 V
100
5
100
100
80
60
40
20
10
0
1
0.0
0.0
0.5
Source Drain Diode Forward Voltage
0.3
1.0
V
V
GS
SD
T
Transfer Characteristics
J
- Gate-to-Source Voltage (V)
= 150 °C
- Source-to-Drain Voltage (V)
1.5
0.6
SQD50P04-13L
25 °C
T
2.0
C
= 125 °C
Vishay Siliconix
2.5
0.9
T
J
3.0
= 25 °C
- 55 °C
www.vishay.com
3.5
1.2
4.0
4.5
1.5
3