SQD50P04 Vishay, SQD50P04 Datasheet - Page 4

• Manufacturer Part Number: SQD50P04
• Description: P-channel 40 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

SQD50P04-13L
Vishay Siliconix
THERMAL RATINGS T
Note
The characteristics shown in the graph.
Normalized Transient Thermal Impedance Junction to Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park”
indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from
empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz.
copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65157.
www.vishay.com
4
0.01
0.1
2
1
10
0.05
0.1
Duty Cycle = 0.5
0.2
-4
Single Pulse
0.02
A
= 25 °C, unless otherwise noted
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
60
50
40
30
20
10
0
Maximum Drain Current vs. Ambient Temperature
0
25
Square Wave Pulse Duration (s)
T
50
C
- Case Temperature (°C)
75
10
100
-2
125
150
175
10
-1
S09-1315-Rev. A, 13-Jul-09
Document Number: 65157
1