SQD50N03-06P Vishay, SQD50N03-06P Datasheet - Page 4

• Manufacturer Part Number: SQD50N03-06P
• Description: N-channel 30 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

SQD50N03-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.05
0.04
0.03
0.02
0.01
0.00
2.0
1.5
1.0
0.5
0.0
- 50
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
V
I
- 25
D
GS
= 20 A
Graph to be available
= 10 V
2
upon completion
T
0
V
J
GS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
of testing
4
50
75
6
100
A
= 25 °C, unless otherwise noted
125
8
150
175
10
100
10
56
52
48
44
40
- 50
1
0
- 25
Source Drain Diode Forward Voltage
Graph to be available
T
J
0.3
= 150 °C
upon completion
0
V
vs. Junction Temperature
T
Drain Source Breakdown
SD
J
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
25
of testing
0.6
50
75
0.9
S-81562-Rev. B, 23-Oct-08
T
Document Number: 68634
J
100
= 25 °C
125
1.2
150
175
1.5