SQJ970EP Vishay, SQJ970EP Datasheet
SQJ970EP
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SQJ970EP Summary of contents
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... 0 ° ° stg e, f SYMBOL c PCB Mount R thJA R thJC SQJ970EP Vishay Siliconix Power MOSFET d Requirements at N-Channel MOSFET LIMIT UNIT 40 V ± 20 6.4 3.6 1 1.4 W ...
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... SQJ970EP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... I - Drain Current (A) D On-Resistance vs. Drain Current Document Number: 65282 S09-1623-Rev. A, 24-Aug- °C, unless otherwise noted ° 4 SQJ970EP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) ...
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... SQJ970EP Vishay Siliconix TYPICAL CHARACTERISTICS T 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source Drain Diode Forward Voltage Temperature (°C) J Drain-Source Brakdown vs. Junction Temperature www.vishay.com °C, unless otherwise noted A 0.15 0.12 0. °C J 0.06 0.03 0.00 0.8 1.0 1 ...
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... Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area - Square W ave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQJ970EP Vishay Siliconix I DM Limited P(t) = 0.0001 P(t) = 0.001 P(t) = 0.01 P(t) = 0 100 is specified - 1 10 www.vishay.com 1 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...