SQJ970EP Vishay, SQJ970EP Datasheet - Page 4

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SQJ970EP

Manufacturer Part Number
SQJ970EP
Description
Dual N-channel 40 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet
SQJ970EP
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.001
0.01
100
0.1
75
71
67
63
59
55
10
1
- 50
Drain-Source Brakdown vs. Junction Temperature
0.0
- 25
Source Drain Diode Forward Voltage
0.2
T
V
0
J
SD
= 150 °C
- Source-to-Drain Voltage (V)
0.4
T
25
J
- Temperature (°C)
50
0.6
75
T
J
0.8
100
= 25 °C
A
125
I
= 25 °C, unless otherwise noted
D
1.0
= 1 mA
150
1.2
175
- 0.3
- 0.6
- 0.9
- 1.2
0.15
0.12
0.09
0.06
0.03
0.00
0.6
0.3
0.0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
- 25
1
2
V
0
GS
T
J
3
= 25 °C
- Gate-to-Source Voltage (V)
Threshold Voltage
25
T
J
- Temperature (°C)
4
50
5
I
T
D
S09-1623-Rev. A, 24-Aug-09
75
J
= 250 µA
= 125 °C
Document Number: 65282
6
100
7
125
I
D
8
= 5 mA
150
9
175
10

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