MT3S150P TOSHIBA Semiconductor CORPORATION, MT3S150P Datasheet - Page 2

• Manufacturer Part Number: MT3S150P
• Description: Toshiba Transistor Gaas Npn Epitaxial Mesa Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics
Electrical Characteristics
Note 1:
Caution: 1. This device is sensitive to electrostatic discharge.
Transition frequency
Insertion gain
Noise figure
3
intercept point
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
rd
order intermodulation distortion output
2. This device may be subject to damage from thermal stress. Observe the precautions below.
C
re
Be sure to provide all tools and equipment with adequate grounding.
- Avoid using soldering irons for soldering under mass production.
- A device once removed from a printed circuit board by using a soldering iron should not be
- If using soldering irons to perform soldering when conducting any kind of evaluation, be sure to
re-used for mass-produced equipment.
complete the soldering within five seconds at a temperature of 270° C or less.
Characteristics
Characteristics
is measured using a 3-terminal method with capacitance bridge.
(Ta = 25°C)
(Ta = 25°C)
|S21e|
|S21e|
Symbol
Symbol
NF(1)
NF(2)
OIP3
I
I
hFE
CBO
EBO
C
C
f
T
ob
re
2
2
(1)
(2)
V
V
V
V
V
V
⊿f=1MHz
V
V
V
V
V
CE
CE
CE
CE
CE
CE
CB
EB
CE
CB
CB
2
=2V, I
=5V, I
=5V, I
=5V, I
=5V, I
=5V, I
=5V,I
=8V, I
=5V, I
=5V, I
=5V, I
C
C
C
C
C
C
E
C
C
E
E
Test Condition
Test Condition
=50mA,f=100MHz,
=50mA
=50mA, f=500MHz
=50mA, f=1GHz
=10mA, f=500MHz
=10mA, f=1GHz
=0
=0
=50mA
=0, f=1MHz
=0, f=1MHz (Note 1)
Min
Min
100
9.5
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
11.5
0.75
0.95
Typ.
1.15
0.85
17
17
35
⎯
⎯
⎯
MT3S150P
2004-08-23
Max
Max
200
1.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
dBmW
GHz
Unit
Unit
dB
dB
dB
dB
µA
µA
pF
pF
-