MT3S150P TOSHIBA Semiconductor CORPORATION, MT3S150P Datasheet - Page 3

• Manufacturer Part Number: MT3S150P
• Description: Toshiba Transistor Gaas Npn Epitaxial Mesa Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
120
100
12
10
100
80
60
40
20
8
6
4
2
10
0
1
0
1
COMMON EMITTER
Ta=25°C
Collector-emitter voltage V
Collector-current I
Collector-current I
2
10
I
|S
C
h
-V
21e
COMMON EMITTER
VCE=5V
Ta=25°C
FE
CE
10
4
-I
|
2
C
-I
C
100
C
C
(mA)
(mA)
VCE=5V
4V
3V
100µA
IB=600µA
500µA
400µA
300µA
200µA
50µA
CE
f=1GHz
Ta=25 ℃
6
(V)
1000
100
8
3
0.001
18
16
14
12
10
18
16
14
12
10
0.01
8
6
4
2
0
8
6
4
2
0
100
0.1
10
1
1
1
0.6
COMMON EMITTER
VCE=5V
Ta=25°C
Base-emitter voltage V
Collector-current I
Collector-current I
0.8
10
10
|S
I
C
21e
f
T
-V
1.0
-I
|
BE
C
2
-I
C
100
100
C
C
(mA)
VCE=5V
4V
3V
(mA)
VCE=5V
4V
3V
f=500MHz
Ta=25 ℃
BE
MT3S150P
1.2
Ta=25 ℃
2004-08-23
(V)
1000
1000
1.4