OM6214SS International Rectifier Corp., OM6214SS Datasheet - Page 2

• Manufacturer Part Number: OM6214SS
• Description: Two Power Mosfets In Hermetic Isolated Sip Package
• Manufacturer: International Rectifier Corp.

ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6214SS (Per FET) (100 Volt)
Parameter
BV
V
I
I
I
V
R
R
DYNAMIC
g
C
C
C
t
t
t
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
t
1 Pulse Test: Pulse Width 300msec, Duty Cycle
d(on)
r
d(off)
f
GSSF
DSS
D(on)
S
SM
rr
fs
GS(th)
DS(on)
DS(on)
DS(on)
iss
oss
rss
SD
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
1
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
100
2.0
9.0
30
.055 .065
2700
1300
470
100
400
0.1
0.2
1.1
.09
10
28
45
50
2%.
±100
- 140
0.25
0.11
- 2.5
- 30
T
4.0
1.0
1.3
C
= 25° unless otherwise noted
S(W )
mA
mA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
A
A
A
V
)
(W
(MOSFET) switching times are
essentially independent of
operating temperature.
V
I
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
dl
1 Pulse Test: Pulse Width 300msec, Duty Cycle
D
C
C
C
J
GS
DS
GS
DS
DS
DS
GS
GS
GS
DS
GS
DS
DD
g
F
= 250 mA
/ds = 100 A/ms
= 150 C,I
= 125° C
= 125 C
= 5.0 W , V
= 25 C, I
= V
= Max. Rat., V
= 0.8 Max. Rat., V
= 0
= 25 V
= 30 V, I
= 0,
= ±20 V
= 10 V, I
= 10 V, I
= 10 V, I
2 V
2 V
GS
DS(on)
DS(on)
, I
D
S
D
F
D
D
D
= 250 mA
G
, V
, I
= -40 A, V
@ 20 A
= I
= 20 A
= 20 A
= 20 A,
= 10V
D
GS
= 20 A
S
G
,
= 10 V
GS
= 0
GS
GS
= 0,
D
S
= 0
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6215SS (Per FET) (200 Volt)
Parameter
BV
V
I
I
I
V
R
R
DYNAMIC
g
C
C
C
t
t
t
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
t
GSSF
DSS
D(on)
d(on)
r
d(off)
f
S
SM
rr
fs
GS(th)
DS(on)
SD
DS(on)
DS(on)
iss
oss
rss
DSS
Current
Resistance
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
1
2%.
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
200
2.0
8.0 12.5
25
2400
1.36 1.52
.085 .095
0.14 0.17
600
250
350
0.1
0.2
25
60
85
38
±100
- 100
0.25
T
- 25
4.0
1.0
- 2
C
= 25° unless otherwise noted
S(W )
mA
mA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
A
A
V
)
(W
(MOSFET) switching times are
essentially independent of
operating temperature.
V
I
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
dl
D
GS
DS
GS
DS
DS
C
DS
GS
GS
GS
C
DS
GS
DS
DD
C
J
g
F
= 250 mA
= 150 C,I
/ds = 100 A/ms
= 125° C
= 125 C
= 5.0 W ,V
= 25 C, I
= 0,
= V
= ±20 V
= Max. Rat., V
= 0.8 Max. Rat., V
= 10 V, I
= 10 V, I
= 10 V, I
= 0
= 25 V
= 75 V, I
2 V
2 V
GS ,
DS(on)
DS(on)
I
D
D
S
GS
F
= 250 m
D
D
D
, V
, I
= -30 A, V
@ 16 A
= I
= 16 A
= 16 A
= 16 A,
D
= 10V
GS
S
= 16 A
,
G
= 10 V
GS
= 0
GS
GS
= 0,
D
S
= 0