OM6214SS International Rectifier Corp., OM6214SS Datasheet - Page 3

• Manufacturer Part Number: OM6214SS
• Description: Two Power Mosfets In Hermetic Isolated Sip Package
• Manufacturer: International Rectifier Corp.

ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6216SS (Per FET) (400 Volt)
Parameter
BV
V
I
I
I
V
R
R
DYNAMIC
g
C
C
C
t
t
t
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
t
1 Pulse Test: Pulse Width 300msec, Duty Cycle
GSSF
DSS
D(on)
d(on)
r
d(off)
f
S
SM
rr
fs
GS(th)
DS(on)
SD
DS(on)
DS(on)
iss
oss
rss
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
1
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
400
2.0
8.0
15
2900
0.25
0.50 0.60
450
150
400
0.1
0.2
2.0
9.6
30
40
80
30
2%.
T
±100
0.25
- 1.6
- 15
- 60
4.0
1.0
2.4
0.3
C
= 25° unless otherwise noted
S(W )
mA
mA
nA
pF
pF
pF
ns
)
ns
ns
ns
ns
V
V
A
V
A
A
V
(W
(MOSFET) switching times are
essentially independent of
operating temperature.
V
V
V
V
I
V
V
V
V
T
V
T
V
V
V
f = 1 MHz
V
R
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
dl
1 Pulse Test: Pulse Width 300msec, Duty Cycle
D
GS
DS
GS
DS
DS
C
DS
GS
GS
GS
C
DS
GS
DS
DD
C
J
g
F
= 250 mA
/ds = 100 A/ms
= 150 C,I
= 125° C
= 125 C
=5.0 W , V
= 25 C, I
= 0
= 25 V
= 200 V, I
= 0,
= V
= ±20 V
= Max. Rat., V
= 0.8 Max. Rat., V
= 10 V, I
= 10 V, I
= 10 V, I
2 V
2 V
GS
DS(on)
DS(on)
, I
D
S
GS
F
D
D
D
= 250 mA
, V
, I
D
= -15 A, V
= I
= 8 A
= 8 A
= 8 A,
D
@ 8.0 A
=10V
GS
= 58A
S
,
G
= 10 V
GS
= 0
GS
GS
= 0,
= 0
D
S
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6217SS (Per FET) (500 Volt)
BV
V
I
I
I
V
R
R
DYNAMIC
g
C
C
C
t
t
t
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
t
Parameter
GSSF
DSS
D(on)
d(on)
r
d(off)
f
S
SM
rr
fs
GS(th)
DS(on)
iss
oss
rss
SD
DS(on)
DS(on)
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
1
2%.
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
500
2.0
6.0
13
2600
0.66 0.88
280
400
0.1
0.2
2.1
0.3
7.2
40
30
46
75
31
±100
0.25
- 1.4
T
- 13
- 52
4.0
1.0
2.8
0.4
C
= 25° unless otherwise noted
S(W )
mA
mA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
A
A
V
)
(W
V
I
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
(MOSFET) switching times are
essentially independent of
operating temperature.
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
dl
D
GS
DS
GS
DS
DS
C
DS
GS
GS
GS
C
DS
GS
DS
DD
C
J
g
F
= 250 mA
/ds = 100 A/ms
= 150 C,I
= 125° C
= 125 C
= 5.0 W , V
= 25 C, I
= 0
= 25 V
= 210 V, I
= 0,
= V
= ±20 V
= Max. Rat., V
= 0.8 Max. Rat., V
= 10 V, I
= 10 V, I
= 10 V, I
2 V
2 V
GS ,
DS(on)
DS(on)
I
D
S
F
= 250 mA
D
D
D
, V
, I
GS
D
= -13 A, V
= I
= 7 A
= 7 A
= 7 A,
D
@ 7.0 A
= 10 V
GS
= 7 A
S
,
G
= 10 V
GS
= 0
GS
GS
= 0,
= 0
D
S