FX6KMJ-2 Renesas Electronics Corporation., FX6KMJ-2 Datasheet - Page 3

• Manufacturer Part Number: FX6KMJ-2
• Description: High-speed Switching Use Pch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6KMJ-2
Performance Curves
Rev.1.00, Aug.20.2004, page 3 of 6
–10
–20
–16
–12
– 2
– 8
– 4
– 8
– 6
– 4
40
32
24
16
Drain Power Dissipation Derating Curve
8
0
0
0
0
0
0
Output Characteristics (Typical)
Gate-Source Voltage (Typical)
Drain-Source Voltage V
Gate-Source Voltage V
Case Temperature Tc (°C)
– 2
– 4
On-State Voltage vs.
50
– 4V
– 4
– 8
– 5V
V
–10V
GS
100
P
D
=
= 20W
–12
– 6
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
150
I
D
GS
–16
DS
– 8
= –12A
– 3.5V
– 2.5V
(V)
(V)
– 3V
– 6A
– 3A
200
–10
–20
–10
–10
–10
– 5.0
– 4.0
–3.0
–2.0
–
1.0
0.8
0.6
0.4
0.2
1.0
–7
–5
–3
–2
–7
–5
–3
–2
–7
–5
–3
–2
–7
–10
0
0
2
1
0
–2 –3 –5–7
0
–1
Tc = 25°C
Single Pulse
Output Characteristics (Typical)
Maximum Safe Operating Area
Drain-Source Voltage V
Drain-Source Voltage V
–2 –3 –5 –7
– 2
On-State Resistance vs.
Drain Current (Typical)
–10
Drain Current I
– 3.5V
0
– 4V
V
–10V
–10
– 5V
–2
GS
– 4
–3 –5–7
10ms
0
=
V
–2 –3 –5–7
GS
–10
= – 4V
– 6
1
–10
100µs
–2
D
Tc = 25°C
Pulse Test
–3 –5–7
1
(A)
P
–2 –3 –5–7
DC
DS
DS
– 8
D
1ms
–10V
= 20W
– 2.5V
(V)
(V)
tw =
10 s
–10
– 3V
2
–10
–10
–2
2