FX6KMJ-2 Renesas Electronics Corporation., FX6KMJ-2 Datasheet - Page 5

• Manufacturer Part Number: FX6KMJ-2
• Description: High-speed Switching Use Pch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6KMJ-2
Rev.1.00, Aug.20.2004, page 5 of 6
10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
–1
7
5
4
3
2
7
5
4
3
2
1
0
Switching Time Measurement Circuit
R
V
I
Pulse Test
V
I
GEN
D
Channel Temperature Tch (°C)
Channel Temperature (Typical)
–50
Channel Temperature (Typical)
–50
D
Channel Temperature Tch (°C)
Vin Monitor
GS
GS
= 1/2 I
= –1mA
= –10V
On-State Resistance vs.
= 0V
Breakdown Voltage vs.
R
D
0
0
GS
50
50
D.U.T.
100
100
R
V
L
150
150
DD
Vout
Monitor
10
10
10
10
–1
t d(on)
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
– 4.0
– 3.2
– 2.4
– 0.8
–1.6
10
Vout
Vin
D = 1.0
–4
0
2 3 5 7
Transient Thermal Impedance Characteristics
0.5
0.2
V
I
D
Channel Temperature (Typical)
–50
Channel Temperature Tch (°C)
DS
= –1mA
10
10%
= –10V
–3
Threshold Voltage vs.
10%
Switching Waveform
2 3 5 7
Single Pulse
0.01
90%
0
0.02
t r
0.05
Pulse Width tw (s)
0.1
10
–2
2 3 5 7
50
t d(off)
10
100
–1
2 3 5 7
150
90%
10
0
90%
2 3 5 7
10%
t f
D =
P
10
tw
DM
1
T
tw
T
2 3 5 7
10
2