TA8493AFG TOSHIBA Semiconductor CORPORATION, TA8493AFG Datasheet - Page 11
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TA8493AFG
Manufacturer Part Number
TA8493AFG
Description
3-phase Full Wave Brushless Dc Motor Driver Ic For Cd-rom Drives
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TA8493AFG.pdf
(27 pages)
- Current page: 11 of 27
- Download datasheet (340Kb)
•
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Hall element bias circuit
between.
FG amp circuit
output.
The hall element bias current is turned off when the driver IC is in standby state.
Make sure that the negative hall bias line is connected to the HB pin.
The remaining voltage is as follows:
Furthermore, this circuit cannot be used if FG output is necessary in standby state.
When the HB terminal is not used, the negative hall bias line must be connected to GND with a resistor in
This circuit uses a hall element signal which is output to FGO after a Schmitt stage.
The FG amp has a hysteresis of 20 mV
The FG amp is active when it is in standby state. When the hall element signal is input, the FG signal is
V
High level: V
Low level: GND to 0.5 V
HB
= 1.2 V (typ.)
CC
− 0.5 to V
CC
at I
at I
[V]
p-p
HB
OFG
(typ.) and its output voltages are
= 10 mA
= 10 µA
11
FGO
HB
2006-3-6
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