MT4S104U TOSHIBA Semiconductor CORPORATION, MT4S104U Datasheet - Page 2

• Manufacturer Part Number: MT4S104U
• Description: Toshiba Transistor Silicon-germanium Npn Epitaxial Planer Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics
Electrical Characteristics
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution:
Transition Frequency
Insertion Gain
Noise Figure
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reverse Transfer Capacitance
This device is sensitive to electrostatic discharge due to applied the high frequency transistor
process of fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
Characteristics
Characteristics
(Ta = 25°C)
(Ta = 25°C)
|S21e|
|S21e|
Symbol
Symbol
NF(1)
NF(2)
I
I
hFE
C
CBO
EBO
C
f
T
ob
re
2
2
(1)
(2)
V
V
V
V
V
V
V
V
V
V
CE
CE
CE
CE
CE
CB
EB
CE
CB
CB
2
=2V, I
=2V, I
=2V, I
=2V, I
=2V, I
=6V, I
=1V, I
=2V, I
=2V, I
=2V, I
C
C
C
C
C
C
E
C
E
E
Test Condition
Test Condition
=0
=0
=0, f=1MHz
=0, f=1MHz (Note 1)
=7mA, f=2GHz
=7mA, f=2GHz
=7mA, f=5.2GHz
=5mA, f=2GHz
=5mA, f=5.2GHz
=7mA
14.0
200
Min
Min
19
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
16.5
10.0
0.67
1.25
Typ.
0.26
0.09
23
⎯
⎯
⎯
MT4S104U
2007-11-01
Max
0.95
Max
0.18
400
0.5
⎯
⎯
⎯
⎯
1
1
GHz
Unit
Unit
dB
dB
dB
dB
µA
µA
pF
pF
-