MT4S200U TOSHIBA Semiconductor CORPORATION, MT4S200U Datasheet - Page 3

• Manufacturer Part Number: MT4S200U
• Description: Toshiba Transistor Silicon-germanium Npn Epitaxial Planer Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
12
10
30
25
20
15
10
0.01
8
6
4
2
0
5
0
100
0.1
0.0
10
1
1
COMMON EMITTER,Ta=25 ℃
0.0
Collector-Emitter voltage V
Base-Emitter voltage V
COMMON EMITTER
VCE=3V
Ta=25℃
Collector-current I
1.0
0.2
|S
21e
2.0
0.4
|
2
I
I
C
C
-I
-V
C
10
-V
CE
BE
3.0
5.8GHz
0.6
C
(mA)
BE
f=5.8GHz
Ta=25 ℃
CE
4.0
0.8
VCE=3v
(V)
120uA
100uA
160uA
140uA
(V)
IB=
80uA
60uA
40uA
20uA
5.0
1.0
100
3
20
18
16
14
12
10
1000
35
30
25
20
15
10
8
6
4
2
0
100
5
0
10
1
1
0.1
Collector-current I
Collector-current I
Collector-current I
|S
1
21e
h
f
|
T
FE
2
10
10
-I
-I
C
C
-I
C
2GHz
COMMON
EMITTER
VCE=3V
C
C
C
(mA)
(mA)
(mA)
10
MT4S200U
f=2GHz
Ta=25℃
VCE=3V
Ta=25 ℃
2007-11-01
VCE=3v
VCE=2v
100
100
100