APT10M11LV Advanced Crystal Technology, APT10M11LV Datasheet - Page 2

• Manufacturer Part Number: APT10M11LV
• Description: Power Generation High Voltage N-channel Enhancement Mode Power Mosfets
• Manufacturer: Advanced Crystal Technology

1
2
3
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum T
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
R
R
C
C
V
C
Q
Q
Q
d(on)
d(off)
I
Q
t
I
SM
t
t
oss
SD
rss
iss
S
gs
gd
r
rr
f
JC
JA
g
rr
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Characteristic
Junction to Case
Junction to Ambient
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.01
0.05
0.2
0.1
10
-4
3
SINGLE PULSE
1
2
(V
S
5
= -I
5
GS
S
(Body Diode)
= -I
(Body Diode)
= 0V, I
D[Cont.]
RECTANGULAR PULSE DURATION (SECONDS)
10
D[Cont.]
-3
j
, dl
S
= -I
, dl
S
/dt = 100A/ s)
D[Cont.]
S
/dt = 100A/ s)
I
D
10
I
)
= 0.5 I
D
4
5
Test Conditions
-2
V
V
= I
Starting T
The maximum current is limited by lead temperature.
DD
DD
V
V
V
R
D[Cont.]
f = 1 MHz
V
DS
GS
GS
G
GS
= 0.5 V
D[Cont.]
= 0.5 V
= 0.6
= 25V
= 10V
= 15V
= 0V
j
@ 25 C
= +25 C, L = 500 H, R
@ 25 C
DSS
DSS
10
-1
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
1.0
G
t 1
= 25 , Peak I
t 2
8600
3200
1180
TYP
TYP
250
TYP
300
110
2.5
95
16
33
46
8
t 1
/ t 2
10300
APT10M11LVR
L
4480
1770
MAX
0.24
MAX
MAX
450
145
165
100
400
1.3
40
= 100A
32
66
70
16
10
Amps
UNIT
UNIT
Volts
UNIT
C/W
pF
nC
ns
ns
C