APT10M11LV Advanced Crystal Technology, APT10M11LV Datasheet - Page 4

• Manufacturer Part Number: APT10M11LV
• Description: Power Generation High Voltage N-channel Enhancement Mode Power Mosfets
• Manufacturer: Advanced Crystal Technology

APT's devices are covered by one or more of the following U.S.patents: 4,895,810
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
400
100
50
10
20
16
12
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
V
1
0
LIMITED BY R DS (ON)
DS
OPERATION HERE
T C =+25 C
T J =+150 C
SINGLE PULSE
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
Q
100
g
, TOTAL GATE CHARGE (nC)
D
[Cont.]
5
200
V DS =50V
10
V DS =20V
300
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
V DS =80V
400
50
Dimensions in Millimeters and (Inches)
500
100
5,256,583
TO-264 Package Outline
100 S
1mS
10mS
100mS
DC
5,045,903
4,748,103
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
5,089,434
5,283,202
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
2.79 (.110)
3.18 (.125)
30,000
10,000
2-Plcs.
5,000
1,000
500
400
100
50
10
5
1
5,182,234
5,231,474
.01
V
V
0
DS
SD
19.51 (.768)
20.50 (.807)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
C iss
C oss
0.4
5,019,522
5,434,095
.1
T J =+150 C
0.8
5,262,336
5,528,058
APT10M11LVR
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
1
1.2
T J =+25 C
C iss
C oss
C rss
1.6
10
2.0
50