APT8075BVFR05 Advanced Crystal Technology, APT8075BVFR05 Datasheet - Page 2

• Manufacturer Part Number: APT8075BVFR05
• Description: Power Generation High Voltage N-channel Enhancement Mode Power Mosfets.
• Manufacturer: Advanced Crystal Technology

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
DYNAMIC CHARACTERISTICS
THERMAL CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
t
t
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
I
C
d
d
C
V
dv
R
R
C
Q
Q
RRM
I
Q
Q
(on)
(off)
t
I
SM
t
t
oss
SD
rss
θJC
θJA
iss
S
rr
gs
gd
/
r
f
rr
g
dt
0.005
0.001
0.05
0.01
0.5
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
[Cont.],
[Cont.],
[Cont.],
D=0.5
0.02
0.01
0.05
0.2
0.1
di
di
di
10
/
/
/
dt
dt
dt
-4
SINGLE PULSE
3
= 100A/µs)
= 100A/µs)
= 100A/µs)
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
D
D
10
Test Conditions
3
4
5
= I
= I
-2
V
V
See MIL-STD-750 Method 3471
Starting T
I
V
DD
DD
D
D
S
V
V
V
R
R
f = 1 MHz
V
[Cont.] @ 25°C
[Cont.] @ 25°C
- -I
DS
GS
GS
G
= 200V.
GS
= 0.5 V
= 0.5 V
T
T
T
T
T
T
D
= 1.6Ω
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 0V
[Cont.],
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
j
= +25°C, L = 4.16mH, R
DSS
DSS
10
di
/
-1
dt
= 100A/µs, V
Note:
Peak T J = P DM x Z θJC + T C
MIN
MIN
MIN
Duty Factor D =
DD
1.0
t 1
G
- V
= 25
2600
t 2
TYP
270
135
130
DSS
13
66
12
11
45
TYP
160
305
TYP
1.8
6.0
8
11
18
Ω
, T
t 1
, Peak I
/ t 2
j
- 150°C, R
3120
MAX
APT8075BVFR
380
200
195
100
MAX
MAX
0.48
20
24
22
70
16
250
525
1.3
12
48
18
L
40
10
= 25A
G
= 2.0
Amps
Amps
UNIT
UNIT
Volts
V/ns
UNIT
°C/W
nC
µC
pF
ns
ns
Ω
,