APT8075BVFR05 Advanced Crystal Technology, APT8075BVFR05 Datasheet - Page 3

• Manufacturer Part Number: APT8075BVFR05
• Description: Power Generation High Voltage N-channel Enhancement Mode Power Mosfets.
• Manufacturer: Advanced Crystal Technology

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
25
20
15
10
25
20
15
10
12
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
5
0
5
0
8
6
4
2
0
-50
25
V
0
0
V
APT8075BVFR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
@ <0.5 % DUTY CYCLE
-25
T
250µSEC. PULSE TEST
V
GS
J
V GS =6V, 7V, 10V & 15V
T
, JUNCTION TEMPERATURE (°C)
80
50
T J = +125°C
C
= 10V
D
, CASE TEMPERATURE (°C)
T J = +25°C
[Cont.]
2
0
160
25
75
50
4
240
100
75
T J = -55°C
100 125 150
6
320
125
5.5V
4.5V
5V
4V
150
400
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
1.4
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
25
20
15
10
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
5
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
= 10V @ 0.5 I
, JUNCTION TEMPERATURE (°C)
T
NORMALIZED TO
V GS =6V, 7V, 10V & 15V
, DRAIN CURRENT (AMPERES)
5
C
5
, CASE TEMPERATURE (°C)
V GS =10V
0
0
DS
25
25
10
10
(ON) vs DRAIN CURRENT
D
[Cont.]
50
50
15
15
75
75 100 125 150
V GS =20V
100 125 150
20
20
5.5V
4.5V
5V
4V
25
25