APTC60DAM24CT1G Microsemi Corporation, APTC60DAM24CT1G Datasheet

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APTC60DAM24CT1G

Manufacturer Part Number
APTC60DAM24CT1G
Description
Boost Chopper Super Junction Mosfet Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
Symbol
R
V
V
E
E
I
Super Junction MOSFET
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
10
9
APT0502 on www.microsemi.com
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Boost chopper
Power Module
CR1
Q2
5
1
2
6
3
4
Parameter
11
12
NTC
www.microsemi.com
Application
Features
Benefits
V
R
I
D
APTC60DAM24CT1G
DSS
DSon
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
= 95A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR1 SiC Schottky Diode
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
= 600V
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
= 24mΩ max @ Tj = 25°C
T
T
T
c
c
c
= 25°C
= 80°C
= 25°C
DSon
Max ratings
1900
600
260
±20
462
95
70
24
15
3
Unit
mJ
W
V
A
V
A
1 – 7

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APTC60DAM24CT1G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC60DAM24CT1G V = 600V DSS R = 24mΩ max @ Tj = 25°C DSon I = 95A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F Q Total Capacitive Charge C C Total Capacitance APTC60DAM24CT1G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V GS ...

Page 3

... 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP1 Package outline See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTC60DAM24CT1G Transistor SiC Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ...

Page 4

... DS R (on) vs Drain Current DS 1.3 Normalized to 1.25 V =10V @ 95A GS 1.2 1.15 1.1 1.05 1 0.95 0 120 160 200 240 280 I , Drain Current (A) D APTC60DAM24CT1G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 280 V > 240 6.5V 250µs pulse test @ < 0.5 duty cycle 6V 200 160 5.5V 120 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 1000000 100000 Coss Ciss 10000 1000 100 Drain to Source Voltage (V) DS APTC60DAM24CT1G ON resistance vs Temperature 3.0 V =10V GS 2 95A D 2.0 1.5 1.0 0.5 0.0 150 Junction Temperature (°C) J Maximum Safe Operating Area 1000 limited by R ...

Page 6

... T =125° =75°C C 150 100 hard switching Drain Current (A) D www.microsemi.com APTC60DAM24CT1G Rise and Fall times vs Current 70 V =400V =2.5Ω =125° L=100µ Drain Current (A) ...

Page 7

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC60DAM24CT1G Single Pulse 0.001 ...

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