APTC60DAM24CT1G Microsemi Corporation, APTC60DAM24CT1G Datasheet - Page 5

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APTC60DAM24CT1G

Manufacturer Part Number
APTC60DAM24CT1G
Description
Boost Chopper Super Junction Mosfet Power Module
Manufacturer
Microsemi Corporation
Datasheet
1000000
100000
10000
1000
1.2
1.1
1.0
0.9
0.8
1.1
1.0
0.9
0.8
0.7
0.6
100
10
Capacitance vs Drain to Source Voltage
25
25
Breakdown Voltage vs Temperature
Threshold Voltage vs Temperature
0
V
T
J
DS
, Junction Temperature (°C)
T
50
50
, Drain to Source Voltage (V)
C
10
, Case Temperature (°C)
Coss
75
75
20
100
100
30
125
125
40
Ciss
Crss
www.microsemi.com
150
150
50
APTC60DAM24CT1G
1000
12
10
100
8
6
4
2
0
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
0
1
I
T
limited by R
25
D
J
40
=95A
V
=25°C
Maximum Safe Operating Area
DS
V
I
T
D
ON resistance vs Temperature
GS
= 95A
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
80 120 160 200 240 280 320
=10V
50
Single pulse
T
T
DS
Gate Charge (nC)
J
C
on
=150°C
=25°C
10
75
V
DS
=300V
100
100
V
DS
V
=120V
125
DS
100 µs
=480V
10 ms
1 ms
150
1000
5 – 7

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