APTGF75DH120T3G Microsemi Corporation, APTGF75DH120T3G Datasheet
APTGF75DH120T3G
Related parts for APTGF75DH120T3G
APTGF75DH120T3G Summary of contents
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... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF75DH120T3G Application • AC and DC motor control • Switched Mode Power Supplies Features • Non Punch Through (NPT) Fast IGBT ...
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... Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr CR1 & CR4 are IGBT protection diodes only APTGF75DH120T3G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125°C CE ...
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... K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF75DH120T3G Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ...
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... Eon T = 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.1 0.05 0.05 0 0.00001 0.0001 APTGF75DH120T3G =15V) GE 150 125 =25°C 100 =125° ( =25°C ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF75DH120T3G 150 V ...