APTGF75DH120T3G Microsemi Corporation, APTGF75DH120T3G Datasheet - Page 4

• Manufacturer Part Number: APTGF75DH120T3G
• Description: Asymmetrical - Bridge Npt Igbt Power Module
• Manufacturer: Microsemi Corporation

Typical Performance Curve
150
125
100
150
125
100
35
30
25
20
15
10
0.25
0.15
0.05
75
50
25
Switching Energy Losses vs Gate Resistance
75
50
25
5
0
0.3
0.2
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 75A
Output Characteristics (V
= 125°C
0.9
0.3
0.05
0.7
0.5
0.1
10
= 600V
=15V
6
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
7
2
0.0001
30
V
8
T
V
T
CE
J
GE
=125°C
J
Eon
3
=25°C
Eoff
(V)
(V)
40
T
9
J
=125°C
T
J
=25°C
4
50
10
GE
=15V)
rectangular Pulse Duration (Seconds)
0.001
60
5
11
Single Pulse
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70
12
6
0.01
IGBT
APTGF75DH120T3G
175
150
125
100
28
24
20
16
12
75
50
25
150
125
100
8
4
0
75
50
25
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
CE
GE
J
G
J
GE
G
J
= 125°C
=125°C
= 7.5 Ω
=7.5 Ω
0.1
= 125°C
= 600V
= 15V
=15V
25
300
1
Output Characteristics
50
2
600
I
C
V
75
(A)
CE
V
V
GE
3
CE
(V)
=20V
900
1
(V)
100
4
Eon
1200
V
125
V
GE
V
GE
5
GE
Eoff
=15V
=9V
=12V
1500
150
10
6
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