APTM120VDA57T3G Microsemi Corporation, APTM120VDA57T3G Datasheet - Page 3

• Manufacturer Part Number: APTM120VDA57T3G
• Description: Dual Boost Chopper Mosfet Power Module
• Manufacturer: Microsemi Corporation

Thermal and package characteristics
Temperature sensor NTC
Symbol Characteristic
Torque
Symbol
∆R
SP3 Package outline
V
R
T
∆B/B
B
Wt
T
T
ISOL
R
STG
thJC
25
25/85
C
J
25
/R
25
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
(dimensions in mm)
28
R
1
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
⎡
⎢
⎢
⎣
B
25
/
85
R
⎛
⎜ ⎜
⎝
25
T
1
25
−
T
1
⎞
⎟ ⎟
⎠
www.microsemi.com
⎤
⎥
⎥
⎦
T: Thermistor temperature
R
T
: Thermistor value at T
17
12
To heatsink
APTM120VDA57T3G
Chopper diode
T
Transistor
C
=100°C
M4
4000
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
5
4
Max
0.32
Max
150
125
100
110
1.2
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
%
K
%
V
g
3 – 7