APTM120VDA57T3G Microsemi Corporation, APTM120VDA57T3G Datasheet - Page 5

• Manufacturer Part Number: APTM120VDA57T3G
• Description: Dual Boost Chopper Mosfet Power Module
• Manufacturer: Microsemi Corporation

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
0.85
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
DS
T
J
, Drain to Source Voltage (V)
T
, Junction Temperature (°C)
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
30
40
Coss
Crss
Ciss
www.microsemi.com
50
APTM120VDA57T3G
100
14
12
10
10
8
6
4
2
0
1
0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
0
1
-50 -25
limited by R
I
T
D
J
V
I
=17A
D
=25°C
V
Maximum Safe Operating Area
GS
=8.5A
T
40
DS
ON resistance vs Temperature
=10V
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
Single pulse
T
T
J
C
=150°C
=25°C
0
DS
Gate Charge (nC)
10
80
on
25 50 75 100 125 150
V
DS
=600V
120
V
DS
100
160
=240V
V
200
10ms
DS
100µs
=960V
1ms
1000
1200
240
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