BAV301 Vishay Semiconductors, BAV301 Datasheet - Page 2

• Manufacturer Part Number: BAV301
• Description: Switching Diode
• Manufacturer: Vishay Semiconductors

Electrical Characteristics
T
Characteristics (T
BAV300...BAV303
Vishay Semiconductors
Forward voltage
Reverse current
Reverse current
Breakdown voltage
Breakdown voltage
Diode capacitance
Differential forward
resistance
Reverse recovery time
www.vishay.com
2 (5)
j
= 25 _ C
94 9084
Figure 1. Reverse Current vs. Junction Temperature
1000
0.01
100
Parameter
0.1
10
1
0
Scattering Limit
40
T
j
– Junction Temperature ( C )
80
I
V
V
V
V
T
T
T
T
I
I
V
I
I
F
R
R
F
F
j
j
j
j
R
R
R
R
R
=100mA
=100 ° C, V
=100 ° C, V
=100 ° C, V
=100 ° C, V
=10mA
=I
=100
=100
j
=50 V
=100 V
=150 V
=200 V
=0, f=1MHz
= 25 _ C unless otherwise specified)
R
120
=30mA, i
m
m
A t /T=0 01 t =0 3ms
A, t
V
Test Conditions
R
= V
160
p
/T=0.01, t
R
R
R
R
RRM
R
= 50 V
= 100 V
= 150 V
= 200 V
=3mA, R
200
p
=0.3ms
L
=100
W
94 9085
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
Figure 2. Forward Current vs. Forward Voltage
1000
Type
100
0.1
10
1
0
T
j
= 25 C
0.4
Symbol
V
V
V
C
V
(BR)
(BR)
I
I
I
I
I
I
I
I
t
r
F
R
R
R
R
R
R
R
R
rr
f
F
D
– Forward Voltage ( V )
0.8
Min
120
200
250
Scattering Limit
60
1.2
Document Number 85545
Typ
1.5
5
1.6
Rev. 6, 25-Jun-01
Max
100
100
100
100
15
15
15
15
50
1
2.0
Unit
nA
nA
nA
nA
m
m
m
m
pF
ns
W
V
V
V
V
V
A
A
A
A