STP11NM60AFP ST Microelectronics, Inc., STP11NM60AFP Datasheet - Page 2

• Manufacturer Part Number: STP11NM60AFP
• Description: N-channel 600V 0.4 Ohm 11A TO-220/TO-220FP/I2PAK Mdmesh Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

STP11NM60A/STP11NM60AFP/STB11NM60A-1
ABSOLUTE MAXIMUM RATINGS
(
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
ON/OFF
2/11
l
) Pulse width limited by safe operating area
Rthj-case
Rthj-amb
V
dv/dt (1)
Symbol
Symbol
SD
R
V
I
(BR)DSS
V
DM
P
V
I
I
DS(on)
V
V
GS(th)
T
GSS
DSS
DGR
I
I
TOT
T
T
ISO
stg
DS
GS
D
D
11A, di/dt 200A/µs, V
j
l
(
l
)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
DS
DD
= 0)
V
GS
(BR)DSS
Parameter
= 0)
C
GS
= 25°C
, T
GS
= 20 k )
j
= 0)
T
JMAX.
C
C
I
V
V
V
V
V
D
= 25°C
= 100°C
DS
DS
GS
DS
GS
= 250 µA, V
= Max Rating
= Max Rating, T
= V
= ± 20V
= 10V, I
Test Conditions
GS
, I
D
D
= 5.5 A
GS
= 250µA
= 0
STB11NM60A-1
C
STP11NM60A
= 125 °C
0.88
TO-220 / I
110
11
44
7
-
1.13
-55 to 150
-55 to 150
Value
2
Min.
600
± 30
600
600
PAK
15
2
62.5
300
STP11NM60AFP
Typ.
0.4
3
TO-220-FP
44 (*)
11 (*)
2500
0.28
7 (*)
35
3.57
Max.
±100
0.45
10
1
4
°C/W
°C/W
W/°C
Unit
Unit
V/ns
µA
µA
°C
nA
°C
°C
W
V
V
V
V
V
A
A
A
V